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| STGE50NC60VD N-channel 50A - 600V - ISOTOP Very fast PowerMESHTM IGBT Features Type STGE50NC60VD VCES 600V VCE(sat) (Max) IC @25C @100C 2.5V 50A High current capability High frequency operation Low CRES/CIES ratio (no cross-conduction susceptibility Very soft ultra fast recovery antiparallel diode ISOTOP Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency. Figure 1. Internal schematic diagram Applications High frequency inverters SMPS and PFC in both hard switching and resonant topologies UPS Motor drivers Table 1. Device summary Order code Marking GE50NC60VD Package ISOTOP Packaging Tube STGE50NC60VD July 2007 Rev 2 1/14 www.st.com 14 Contents STGE50NC60VD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STGE50NC60VD Electrical ratings 1 Table 2. Symbol VCES IC (1) IC (1) ICL (2) VGE IF PTOT Tstg Tj Electrical ratings Absolute maximum ratings Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at TC = 25C Collector current (continuous) at TC = 100C Collector current (pulsed) Gate-emitter voltage Diode RMS forward current at Tc=25C Total dissipation at TC = 25C Storage temperature -55 to 150 Operating junction temperature T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C Value 600 80 50 200 20 30 260 Unit V A A A V A W C 1. Calculated according to the iterative formula: 2. Pulse width limited by Tjmax Table 3. Symbol Rthj-case Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case (IGBT) Thermal resistance junction-case (diode) Thermal resistance junction-amb Min ---Typ ---Max 0.48 1.5 50 Unit C/W C/W C/W 3/14 Electrical characteristics STGE50NC60VD 2 Electrical characteristics (TJ = 25 C unless otherwise specified) Table 4. Symbol VBR(CES) VCE(sat) VGE(th) ICES IGES gfs Static Parameter Collector-emitter breakdown voltage Test conditions IC= 1mA, VGE= 0 Min. 600 1.9 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S Collector-emitter saturation VGE= 15V, IC= 40A voltage VGE= 15V, IC=40A,Tc=125C Gate threshold voltage Collector cut-off current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VCE= VGE, IC= 250 A VCE= Max rating,TC= 25C VCE= Max rating,TC= 125C VGE= 20V, VCE= 0 VCE = 15V, IC= 20A 5.75 150 1 100 20 Table 5. Symbol Cies Coes Cres Qg Qge Qgc Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions VCE = 25V, f = 1MHz, VGE = 0 VCE = 390V, IC = 40A, VGE = 15V, Figure 17 Min. Typ. 4550 350 105 214 30 96 Max. Unit pF pF pF nC nC nC 4/14 STGE50NC60VD Electrical characteristics Table 6. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(Voff) tf tr(Voff) td(Voff) tf Switching on/off (inductive load) Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC = 390V, IC = 40A , RG= 3.3 VGE= 15V, Figure 16 VCC = 390V, IC = 40A , RG= 3.3 VGE= 15V, Tj = 125C Figure 16 VCC = 390V, IC = 40A RG= 3.3 VGE= 15V, , Figure 16 VCC = 390V, IC = 40A , RG= 3.3 VGE= 15V, Tj = 125C Figure 16 Min. Typ. 43 17 2060 42 19 1900 25 140 45 60 170 77 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 7. Symbol Eon(1) Eoff(2) Ets Eon(1) Eoff(2) Ets Switching energy (inductive load) Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 40A , RG= 3.3 VGE= 15V, Figure 18 VCC = 390V, IC = 40A RG= 3.3 VGE= 15V, , Tj = 125C Figure 18 Min. Typ. 330 720 1050 640 1400 2040 Max. 450 970 1420 Unit J J J J J J 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 18 If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current 5/14 Electrical characteristics STGE50NC60VD Table 8. Symbol Vf trr Qrr Irrm trr Qrr Irrm Collector-emitter diode Parameter Forward on-voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions If = 20A If = 20A, Tj = 125C If = 20A,VR = 40V, Tj = 25C, di/dt = 100 A/s Figure 19 If = 20A,VR = 40V, Tj =125C, di/dt = 100A/s Figure 19 Min. Typ. 1.5 1 44 66 3 88 237 5.4 Max. 2.2 Unit V V ns nC A ns nC A 6/14 STGE50NC60VD Electrical characteristics 2.1 Figure 2. Electrical characteristics (curves) Output characteristics Figure 3. Transfer characteristics Figure 4. Transconductance Figure 5. Collector-emitter on voltage vs temperature Figure 6. Collector-emitter on voltage vs collector current Figure 7. Normalized gate threshold vs temperature 7/14 Electrical characteristics Figure 8. Normalized breakdown voltage vs temperature Figure 9. STGE50NC60VD Gate charge vs gate-emitter voltage Figure 10. Capacitance variations Figure 11. Total switching losses vs temperature Figure 12. Total switching losses vs gate charge resistance Figure 13. Total switching losses vs collector current 8/14 STGE50NC60VD Figure 14. Turn-off SOA Electrical characteristics Figure 15. Emitter-collector diode characteristics 9/14 Test circuit STGE50NC60VD 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Test circuit for inductive load switching Figure 18. Switching waveform Figure 19. Diode recovery time waveform 10/14 STGE50NC60VD Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/14 Package mechanical data STGE50NC60VD ISOTOP MECHANICAL DATA DIM. MIN. A B C D E F G H J K L M N O 11.8 8.9 1.95 0.75 12.6 25.15 31.5 4 4.1 14.9 30.1 37.8 4 7.8 8.2 4.3 15.1 30.3 38.2 mm TYP. MAX. 12.2 9.1 2.05 0.85 12.8 25.5 31.7 MIN. 0.466 0.350 0.076 0.029 0.496 0.990 1.240 0.157 0.161 0.586 1.185 1.488 0.157 0.307 0.322 0.169 0.594 1.193 1.503 inch TYP. MAX. 0.480 0.358 0.080 0.033 0.503 1.003 1.248 G O B A N D E F J K L M H C 12/14 STGE50NC60VD Revision History 5 Table 9. Date Revision History Revision history Revision 1 2 First release Internal schematic diagram has been updated Figure 1 Changes 11-Oct-2006 24-Jul-2007 13/14 STGE50NC60VD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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